Low resistance alloyed ohmic contacts to Al0.48In0.52As/n+-Ga0.47In0.53As

Author

Capani, P.M. ; Mukherjee, Sayan D. ; Zwicknagl, P. ; Berry, J.D. ; Griem, H.T. ; Rathbun, L. ; Eastman, L.F.

Author_Institution

Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithaca, USA

Volume

20

Issue

11

fYear

1984

Firstpage

446

Lastpage

447

Abstract

A low ohmic contact resistance metallurgy and associated alloy cycles have been developed for applications to Al0.48In0.52As/Ga0.47In0.53As MODFETs (HEMTs). The metallurgy involves sequentially evaporated Ni/Ge/Au/Ag/Au layers followed by transient thermal alloy cycles. This resulted in low transfer resistances ~0.06 Â¿mm to the underlying GalnAs layer for alloying temperatures to ~480Â°C.

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; germanium alloys; gold alloys; indium compounds; metallisation; nickel alloys; ohmic contacts; semiconductor technology; silver alloys; ternary semiconductors; HEMTs; MESFET; MODFETs; Ni-Ge-Au-Ag alloy; alloy cycles; alloying temperatures; evaporated Ni/Ge/Au/Ag/Au layers; low ohmic contact resistance metallurgy; low resistance ohmic contacts; metallisation; ternary compound semiconductors; transient thermal alloy cycles; underlying GaInAs layer;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19840310

Filename

4248766