Title :
Monolithic integration of low-threshold-current 1.3 ¿m GaInAsP/InP DFB lasers
Author :
Hirayama, Yuzo ; Kinoshita, J. ; Furuyama, H. ; Uematsu, Yutaka
Author_Institution :
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Abstract :
Two 1.3 ¿m GaInAsP/InP DFB lasers with low threshold currents (28 and 29 mA) were successfully integrated. Both DFB lasers operated continuously at temperatures of up to 68°C. The 12 Å separation in wavelength between the two lasers was produced by a 2 Å difference of the grating periods. A thermal interaction between the two lasers was estimated from the shift in their wavelengths.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; multiplexing equipment; optical communication equipment; semiconductor junction lasers; 1.3 micron; 12 angstroms wavelength separation; 68°C; GaInAsP/InP DFB lasers; III-V semiconductors; WDM; continuous operation; grating period difference; integrated optics; low threshold currents; optical communication equipment; semiconductor lasers; thermal interaction; wavelength multiplexing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840324
