Title :
Dual-band deep ultraviolet AlGaN photodetectors
Author :
Aslam, S. ; Miko, L. ; Stahle, C. ; Franz, D. ; Pugel, D. ; Guan, B. ; Zhang, J.P. ; Gaska, R.
Author_Institution :
NASA/Goddard Space Flight Center, Greenbelt
Abstract :
The design, fabrication and characterisation of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector are reported. The photodetector can separate UV-A and UV-B band radiation by bias switching a two-terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A (315-400 nm) and reject UV-B (280-315 nm) band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.
Keywords :
III-V semiconductors; photodetectors; ultraviolet detectors; wide band gap semiconductors; AlGaN; UV-A band radiation; UV-B band radiation; back-illuminated voltage bias selectable dual-band AlGaN UV photodetector; bias switching; dual-band deep ultraviolet AlGaN photodetectors; forward bias; two-terminal n-p-n homojunction structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20072579