Title :
High-sensitivity Hi-Lo germanium avalanche photodiode for 1.5 μm-wavelength optical communication
Author :
Niwa, Masaaki ; Tashiro, Yoichiro ; Minemura, Kazuki ; Iwasaki, Hisao
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
A high-sensitivity small-detectable-area Hi-Lo germanium avalanche photodiode (Ge APD) was developed for use in 1.55 μm wavelength optical communication systems. This device has Hi-Lo (p+nn-) impurity profile. Its detectable area is 30 μm in diameter for single-mode optical-fibre use. The minimum average received signal level obtained was -40.5 dBm (at 450 Mbit/s, λ = 1.55 μm, BER = 10-9, return-to-zero). This is 0.7 dB better than the value for the 80μm diameter similar structure Ge APD.
Keywords :
avalanche photodiodes; elemental semiconductors; germanium; optical communication equipment; optical fibres; 1.55 micron wavelength; 450 Mbit/s; Ge; Hi-Lo APD; avalanche photodiode; elemental semiconductors; optical communication; p+-n-n- impurity profile; single-mode optical-fibre;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840383
