• DocumentCode
    993106
  • Title

    Improved Nb-Si-Nb SNAP devices

  • Author

    Kroger, H. ; Smith, L.N. ; Jillie, D.W. ; Thaxter, J.B.

  • Author_Institution
    Sperry Research Center, Sudbury, MA, USA
  • Volume
    19
  • Issue
    3
  • fYear
    1983
  • fDate
    5/1/1983 12:00:00 AM
  • Firstpage
    783
  • Lastpage
    786
  • Abstract
    We have compared the tunneling characteristics of Nb-Si-Nb junctions whose amorphous silicon barriers have been sputtered in pure Ar with those sputtered Ar-H2plasmas as well as in various combinations. We observe lower subgap currents with composite barriers which comprise a central region which is hydrogenated but which is sandwiched between two thin unhydrogenated layers. The improved tunneling characteristics may be associated with the lower density of localized states in the hydrogenated silicon.
  • Keywords
    Amorphous semiconductor materials/devices; Josephson devices; Silicon materials/devices; Amorphous silicon; Argon; Electrodes; Niobium; Oxidation; Plasma density; Plasma devices; Plasma properties; Reflectivity; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1983.1062286
  • Filename
    1062286
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=993106