Title :
A novel current memory circuit for AMOLEDs
Author :
Lin, Yen-Chung ; Shieh, Han-Ping David
Author_Institution :
Inst. of Electro-optical Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2004 12:00:00 AM
Abstract :
A novel switched-current (SI) memory circuit with improved accuracy and operating frequency for active-matrix organic light-emitting displays (AMOLEDs) was developed. The proposed SI memory, constructed from current memory structure, can not only reduce the influence of charge-injection without using larger storage capacitor, but also realize the significant amount of speed up by means of small storage capacitor. Furthermore, the capability of copying the current signal is achieved without relying on the matching of device characteristics. The proposed SI memory circuit was implemented by low temperature poly-silicon technology and is suitable for current driving scheme-based high-resolution AMOLED applications.
Keywords :
LED displays; capacitors; elemental semiconductors; organic light emitting diodes; semiconductor storage; silicon; switched current circuits; LTPS-TFT; OLED; SI memory circuit; active-matrix organic light-emitting displays; charge-injection; current driving scheme; current memory structure; current signal; device characteristic matching; high-resolution AMOLED applications; low temperature polysilicon technology; storage capacitor; switched-current memory circuit; thin-film transistors; Active matrix organic light emitting diodes; Active matrix technology; Capacitors; Circuits; Flat panel displays; Frequency; Parasitic capacitance; Switches; Thin film transistors; Voltage; AMOLEDs; Active matrix; LTPS-TFT; OLEDs; active matrix organic light-emitting displays; current memory; low temperature poly-silicon thin-film transistors; organic light-emitting displays; switched current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.827371