A novel current memory circuit for AMOLEDs

A novel switched-current (SI) memory circuit with improved accuracy and operating frequency for active-matrix organic light-emitting displays (AMOLEDs) was developed. The proposed SI memory, constructed from current memory structure, can not only reduce the influence of charge-injection without using larger storage capacitor, but also realize the significant amount of speed up by means of small storage capacitor. Furthermore, the capability of copying the current signal is achieved without relying on the matching of device characteristics. The proposed SI memory circuit was implemented by low temperature poly-silicon technology and is suitable for current driving scheme-based high-resolution AMOLED applications.