DocumentCode :
993144
Title :
Surface recombination mechanism in graded-base InGaAs-InP HBTs
Author :
Jin, Z. ; Neumann, S. ; Prost, W. ; Tegude, F.J.
Author_Institution :
Solid State Electron. Dept., Univ. Duisburg-Essen, Duisburg, Germany
Volume :
51
Issue :
6
fYear :
2004
fDate :
6/1/2004 12:00:00 AM
Firstpage :
1044
Lastpage :
1045
Abstract :
The surface recombination at extrinsic base region in graded-base InGaAs-InP heterostructure bipolar transistors (HBTs) is studied. The (NH4)2S treatment eliminates the surface recombination, seen from the size-independent current gain. The surface recombination currents of the selfand nonself-aligned HBTs have different behavior. The mechanism of it is discussed.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface recombination; (NH4)2S treatment; InGaAs-InP; extrinsic base region; graded-base InGaAs-InP HBT; heterostructure bipolar transistors; nonself-aligned HBT; self-aligned HBT; size-independent current gain; surface recombination mechanism; Bipolar transistors; Chemicals; Current density; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Passivation; Radiative recombination; Surface treatment; Graded base; HBT; InP; heterostructure bipolar transistor; surface recombination;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2004.827380
Filename :
1300844
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=993144
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