DocumentCode :
993224
Title :
Near room temperature 1.3 μm single photon counting with a InGaAs avalanche photodiode
Author :
Levine, B.F. ; Bethea, C.G. ; Campbell, Joe C.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Volume :
20
Issue :
14
fYear :
1984
Firstpage :
596
Lastpage :
598
Abstract :
We report the first single-photon counting experiments in a III-V APD. High quantum efficiency, η=12%, near-room-temperature operation, T=-20°C, has been achieved at long wavelengths λ=1.3 μm.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photon counting; III-V APD; III-V semiconductors; InGaAs avalanche photodiode; long wavelengths; near-room-temperature operation; quantum efficiency; single photon counting; temperature -20°C; wavelength 1.3 micron;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19840411
Filename :
4248889
Link To Document :
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