• DocumentCode
    993258
  • Title

    Picosecond absorption saturation in GaInAsP

  • Author

    Miller, Alice ; Manning, R.J. ; Fox, A.M. ; Marsh, John H.

  • Author_Institution
    Royal Signals & Radar Establishment, Great Malvern, UK
  • Volume
    20
  • Issue
    14
  • fYear
    1984
  • Firstpage
    601
  • Lastpage
    603
  • Abstract
    Optical excite/probe measurements in Ga0.35In0.65As0.78¿P0.22 using high-power 5 ps pulses at 1.054 ¿m show a recovery of the bleached transmission in 12 Ps consistent with fast Auger carrier recombination. Evidence of induced intervalence band absorption is apparent.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical saturable absorption; Ga0.35In0.65As0.78P0.22; GaInAsP; III-V semiconductors; bleached transmission; fast Auger carrier recombination; high-power 5 ps pulses; induced intervalence band absorption; optical excite/probe measurements; picosecond optical absorption saturation; wavelength 1.054 micron;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840415
  • Filename
    4248894