• DocumentCode
    993461
  • Title

    Electroabsorption in InGaAsP-InP double heterostructures

  • Author

    Dutta, N.K. ; Olsson, N.A.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    20
  • Issue
    15
  • fYear
    1984
  • Firstpage
    634
  • Lastpage
    635
  • Abstract
    This letter reports the measurements of electroabsorption in InGaAsP-InP double heterostructures for electric fields in the range of 10¿300 kV/cm. The absorption of the waveguide modes is very large (-40 cm¿1 cm at¿5 V applied bias) for photon energies ~;100 meV from the bandgap The electro-absorption is polarisation dependent. The absorption for light polarised along the field (TM-mode) is larger than that for light polarised normal to the field (TE-mode). The electroabsorption effect can be used to produce light amplitude modulators, polarisers and photodetectors.
  • Keywords
    III-V semiconductors; electroabsorption; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical modulation; III-V semiconductors; InGaAsP-InP double heterostructures; TE-mode; TM-mode; electroabsorption; light amplitude modulators; light polarisation; photodetectors; polarisers; waveguide modes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840436
  • Filename
    4248924
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=993461