Low-dark-current low-voltage 1.3-1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy

Author

Capasso, Federico ; Cho, Andrew Y. ; Foy, P.W.

Author_Institution

AT&T Bell Laboratories, Murray Hill, USA

Volume

20

Issue

15

fYear

1984

Firstpage

635

Lastpage

637

Abstract

The operation of the recently disclosed heterojunction avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions (HI-LO SAM APD) is demonstrated. This new structure which features a doping spike in the wide gap layer offers several advantages over conventional SAM APDs (lower dark current and excess noise factor, greater gain stability). Low dark currents (≅1 nA), low voltage operation (-26 V) and gains as high as 50 at 1.60 μm are demonstrated in an Al_0.48In_0.52As/Ga_0.47In_0.53As prototype grown by molecular beam epitaxy.

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; Al_0.48In_0.52As/Ga_0.47In_0.53 As structure; absorption regions; avalanche photodiode; dark current; doping spike; excess noise factor; gain stability; high-low electric field profile; low voltage operation; molecular beam epitaxy; multiplication regions; semiconductor; wavelength 1.3 to 1.6 microns; wide gap layer;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19840437

Filename

4248925