Title :
Current–Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A “Bottom-Up” Perspective
Author :
Pimparkar, N. ; Cao, Q. ; Kumar, Sudhakar ; Murthy, J.Y. ; Rogers, J. ; Alam, M.A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
By generalizing the classical linear response theory of "stick" percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID=A/LSxi(LS/LC,rho SLS 2)timesf(VG,VD ), where A is a technology-specific constant, xi is a function of geometrical factors such as stick length LS, channel length LC, and stick density rhoS, and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions
Keywords :
semiconductor device models; thin film transistors; carbon nanotube; geometrical parameters; inhomogeneous percolation theory; nanobundle thin film transistors; network transistor; Chemistry; Current measurement; Geometry; Laboratories; MOSFETs; Nanobioscience; Nanowires; Silicon; Thin film transistors; Threshold voltage; Carbon nanotube (NT); inhomogeneous percolation theory; network transistor; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.889219
