Title :
A non-isothermal device simulator for MOSFET analysis
Author :
Hayashi, Hirokazu ; Dang, Ryo
Author_Institution :
Coll. of Eng., Hosei Univ., Tokyo, Japan
fDate :
3/1/1993 12:00:00 AM
Abstract :
A nonisothermal semiconductor device simulator is developed which solves not only the conventional drift-diffusion equations but also the energy balance and heat flow equations to account for nonequilibrium transport phenomena and lattice temperature effects. The results are compared with the conventional drift-diffusion model. In order to reduce computation time, the heat flow equation is solved by an iterative scheme where this equation is solved only once during three cycles of the iteration loop. It is found that heat generation abruptly increases in the vicinity of the drain and the channel interface, and the lattice temperature shows a localized increase of about 20° in a MOSFET with a channel length of 0.3 μm, under a bias of VG= VD=3.0 V. The electron density distribution spread is broader than with that of the drift-diffusion model-that is, the channel depth becomes wider than in a conventional case
Keywords :
electronic engineering computing; insulated gate field effect transistors; iterative methods; semiconductor device models; MOSFET analysis; drift-diffusion equations; electron density distribution spread; energy balance equation; heat flow equations; iterative scheme; lattice temperature effects; nonisothermal semiconductor device simulator; Analytical models; Charge carrier processes; Electron mobility; Energy loss; Lattices; MOSFET circuits; Poisson equations; Space heating; Temperature dependence; Thermal conductivity;
Journal_Title :
Magnetics, IEEE Transactions on