Title :
Electron-beam-induced damage study in GaAs-AlGaAs heterostructures as determined by magnetotransport characterization
Author :
Fink, Tobin ; Smith, Doran D. ; Braddock, W. David
Author_Institution :
US Army Electron. Technol. & Device Lab., Ft. Monmouth, NJ, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
The effect of electron energy on the two-dimensional electron gas (2D EG) transport properties of high-electron-mobility transistor (HEMT) structures at low temperatures is measured. The structures were grown by molecular beam epitaxy (MBE) with a 2D EG approximately 850 Å below the surface. The HEMTs were fabricated into Hall bars, and damage was assessed by changes in the 2D EG concentrations as determined from Schubnikov-de Haas oscillations and changes in the mobility as determined from the zero magnetic-field resistivity. For electron energies from 5.0 to 12.5 keV, the electron dose produced a degradation of the Hall mobility. No damage was observed for electron energies outside this range; this result is attributed to the penetration depth and damage distribution
Keywords :
Hall effect; III-V semiconductors; aluminium compounds; electron beam effects; gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; semiconductor junctions; 2DEG; GaAs-AlGaAs; HEMT; Hall bars; MBE; Schubnikov-de Haas oscillations; damage distribution; electron beam induced damage; electron energy; electron mobility changes; high-electron-mobility transistor; low temperatures; magnetotransport characterization; molecular beam epitaxy; penetration depth; semiconductors; two-dimensional electron gas; zero magnetic-field resistivity; Bars; Conductivity; Degradation; Electron mobility; Energy measurement; HEMTs; Hall effect; MODFETs; Molecular beam epitaxial growth; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
