• DocumentCode
    994012
  • Title

    Ion-beam-deposited films for refractory-metal tunnel junctions

  • Author

    Ruggiero, S.T. ; Face, D.W. ; Prober, D.E.

  • Author_Institution
    Yale University, New Haven, CT
  • Volume
    19
  • Issue
    3
  • fYear
    1983
  • fDate
    5/1/1983 12:00:00 AM
  • Firstpage
    960
  • Lastpage
    963
  • Abstract
    We report on the application of a Kaufman ion source to the deposition of Nb and Ta thin films. We find that high quality Nb films (Tc= 9.1 K) can be produced by this technique under tolerant deposition conditions. In addition, substantial, systematic improvement in the I-V characteristics of Nb tunnel junctions has been realized by depositing, in situ, thin (≥10Å) Ta layers on the Nb film surface.
  • Keywords
    Ion radiation effects; Niobium materials/devices; Tunnel effect; Copper; Ion sources; Josephson junctions; Niobium; Optical films; Physics; Sputtering; Substrates; Superconducting epitaxial layers; Superconducting films;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1983.1062371
  • Filename
    1062371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=994012