Nondestructive memory cell using a two-junction Josephson interferometer

This paper presents a novel nondestructive memory cell using a two-junction interferometer. Most of single-flux-quantum memory cells have been the destructive ones, which must rewrite the information for logic "1" after a reading operation. This makes the circuitry of the cell complex. To avoid this disadvantage, a novel self-rewriting technique is introduced by setting a coil between the terminals of the interferometer. The principle of the operation of the cell is described and the simulation for the behaviours of the cell are illustrated in detail. The results of the simulation show that the reliable operation of the cell can be achieved with high operating speed.