• DocumentCode
    994246
  • Title

    Thermal- and Laser-Induced Order–Disorder Switching of In-Doped Fast-Growth Sb70Te30 Phase-Change Recording Films

  • Author

    Hsu, Yung-Sung ; Her, Yung-Chiun ; Cheng, Shun-Te ; Tsai, Song-Yeu

  • Author_Institution
    Dept. of Mater. Eng., Nat. Chung-Hsing Univ., Taichung
  • Volume
    43
  • Issue
    2
  • fYear
    2007
  • Firstpage
    936
  • Lastpage
    938
  • Abstract
    Adding In into Sb70Te30 recording film can improve the archival stability. However, initializing ability and recording sensitivity will be scarified, and ablation effect will be enhanced. Recording bits could only be smoothly switched between the amorphous and crystalline states with an adequate value of reduced activation energy
  • Keywords
    amorphous semiconductors; annealing; antimony compounds; crystallisation; indium; laser beam effects; melting; optical storage; order-disorder transformations; phase change materials; random-access storage; semiconductor thin films; InSbTe; ablation effect; amorphous state; crystalline state; crystallization; initializing ability; laser irradiation; laser-induced order-disorder switching; melting; phase change recording films; recording bits; recording sensitivity; thermal annealing; thermal-induced order-disorder switching; Annealing; Crystallization; Disk recording; Kinetic theory; Optical films; Optical materials; Optical pulses; Plasma temperature; Reflectivity; Tellurium; Crystallization; In–Sb–Te; melting; pulsed laser irradiation; reduced activation energy;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2006.888523
  • Filename
    4069024
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=994246