• DocumentCode
    994306
  • Title

    Transistor effect in monolithic Si/CoSi2/Si epitaxial structures

  • Author

    Rosencher, E. ; Delage, S. ; Campidelli, Y. ; Arnaud D´Avitaya, F.

  • Author_Institution
    CNET-CNS, Meylan, France
  • Volume
    20
  • Issue
    19
  • fYear
    1984
  • Firstpage
    762
  • Lastpage
    764
  • Abstract
    Epitaxial Si ¿111¿/CoSi2/Si structures have been grown by molecular beam epitaxy. The transistor effect, via ballistic electron transport in the CoSi2 200 Å-thick base, has been observed. The ballistic mean free path in CoSi2 obtained (¿B ¿ 105 Å) from the current gain is consistent within 20% with the predicted value (¿Bth ¿ 80 Å).
  • Keywords
    cobalt compounds; elemental semiconductors; molecular beam epitaxial growth; p-n heterojunctions; semiconductor-metal boundaries; silicon; transistors; CoSi2 200 angstroms-thick base; MBE; SMS structures; Si¿111¿/CoSi2/Si structures; ballistic electron transport; ballistic mean free path; current gain; molecular beam epitaxy; monocrystalline structure; monolithic Si/CoSi2/Si epitaxial structures; p-n heterojunctions; semiconductor metal semiconductor structure; transistor effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840519
  • Filename
    4249026
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=994306