DocumentCode :
994403
Title :
Electrical characterization and detection performances of various semi-insulating GaAs crystals for low energy gamma-rays
Author :
Bertolucci, E. ; Bottigli, U. ; Cola, A. ; Fantacci, M.E. ; Stefanini, A. ; Vasanelli, L.
Author_Institution :
Dipartimento di Fisica, Pisa Univ., Italy
Volume :
42
Issue :
4
fYear :
1995
fDate :
8/1/1995 12:00:00 AM
Firstpage :
254
Lastpage :
257
Abstract :
In order to investigate the correlation between the electrical characteristics of the semi-insulating GaAs and its properties as a possible detector for low energy gamma-rays, we have measured, for various materials, the forward and the reverse I-V characteristic, the capacitance as a function of the frequency at various bias voltages and the capacitance as a function of the bias voltage at various frequencies. To measure the charge collection efficiency, the energy resolution and the detection efficiency as a function of the bias voltage the crystals have been irradiated with 22, 60, 88 and 122 keV photons. The results are discussed and a comparison between materials from various factories, of different thickness and equipped with different contacts is also presented
Keywords :
III-V semiconductors; capacitance; gallium arsenide; gamma-ray detection; semiconductor counters; 122 keV; 22 keV; 60 keV; 88 keV; GaAs; GaAs detector; bias voltage; capacitance; charge collection efficiency; contacts; detection efficiency; energy resolution; forward I-V characteristic; frequency; low energy gamma-rays; reverse I-V characteristic; semi-insulating; Capacitance measurement; Electric variables; Electric variables measurement; Energy measurement; Frequency measurement; Gallium arsenide; Gamma ray detection; Gamma ray detectors; Photonic crystals; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.467841
Filename :
467841
Link To Document :
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