DocumentCode :
994899
Title :
Thickness Dependence of Giant Magnetoresistance in Spin Valves: Influence of Interface and Bulk Scattering
Author :
Wang, Li ; Han, Guchang ; Wu, Yihong
Author_Institution :
Data Storage Inst., Singapore
Volume :
43
Issue :
2
fYear :
2007
Firstpage :
506
Lastpage :
509
Abstract :
Using the semiclassical Boltzmann theory, we have investigated the influences of pure interface, nonpure interface, bulk, and interface plus bulk scattering on the giant magnetoresistance (GMR) dependence on layer thickness of the bottom spin valve (BSV), synthetic antiferromagnetic (SAF) spin valve, and dual spin valve (DSV). Our work shows consistency with experiment and theory and may provide some useful guidelines for electrical and structural optimizations of spin valves
Keywords :
Boltzmann equation; antiferromagnetic materials; giant magnetoresistance; magnetic multilayers; magnetic storage; magnetoelectronics; spin valves; bottom spin valve; bulk scattering; dual spin valve; giant magnetoresistance; interface plus bulk scattering; layer thickness; nonpure interface scattering; pure interface scattering; semiclassical Boltzmann theory; spintronics; synthetic antiferromagnetic spin valve; Antiferromagnetic materials; Boundary conditions; Equations; Giant magnetoresistance; Guidelines; Magnetic heads; Magnetoelectronics; Memory; Scattering; Spin valves; Boltzmann equation; magnetoresistance; scattering; spin valve;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2006.887359
Filename :
4069082
Link To Document :
بازگشت