Title :
Instantaneous model of a MESFET for use in linear and nonlinear circuit simulations
Author :
Corbella, Ignasi ; Legido, Josep Maria ; Naval, Gonzalo
Author_Institution :
Dept. of Signal Theory & Commun., Univ. Politecnica de Catalunya, Barcelona, Spain
fDate :
7/1/1992 12:00:00 AM
Abstract :
A formal approach for nonlinear modeling of FETs is presented. The intrinsic transistor is described by current and charge generators, that are instantaneously dependent on the two internal voltages. The extrinsic parasitic elements are also included. This instantaneous model is obtained from the small signal equivalent circuit computed at a number of bias points, by integration of the bias dependent elements. A program for using this model in nonlinear circuit analysis has been developed. The process has been carried out for two transistors, one being of low noise, and the other a power MESFET. Good agreement has been observed when comparing the nonlinear analysis with measured data. A solid-state power amplifier at 28 GHz has been designed using the power transistor, delivering 21 dBm at 1 dB compression point
Keywords :
Schottky gate field effect transistors; circuit analysis computing; equivalent circuits; linear network analysis; nonlinear network analysis; power transistors; semiconductor device models; solid-state microwave devices; 28 GHz; FETs; bias dependent elements; charge generators; current generators; extrinsic parasitic elements; instantaneous model; low-noise MESFET; nonlinear circuit analysis; nonlinear circuit simulations; nonlinear modeling; power MESFET; power transistor; program; small signal equivalent circuit; solid-state power amplifier; Circuit analysis; Circuit noise; Data analysis; Equivalent circuits; FETs; Integrated circuit measurements; MESFETs; Nonlinear circuits; Solid state circuits; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
