Title :
Interpretation of C/V characteristics for heterojunctions and high-low junctions
Author_Institution :
University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
Abstract :
Useful information about the interface can be obtained for heterojunctions or high-low junctions by simple inspection of the graphs of C¿2 against V. The distance between the intercepts of the two linear portions of the graph on the voltage axis is simply related to the doping densities and the interface charge.
Keywords :
capacitance; doping profiles; p-n heterojunctions; semiconductor junctions; capacitance voltage characteristics; doping densities; heterojunctions; high-low junctions; interface; interface charge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840589
