• DocumentCode
    995147
  • Title

    High-power SLM operation of 1.3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate

  • Author

    Suzuki, Yuya ; Nagai, Hiroto ; Noguchi, Y. ; Matsuoka, T. ; Kurumada, K.

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
  • Volume
    20
  • Issue
    21
  • fYear
    1984
  • Firstpage
    881
  • Lastpage
    882
  • Abstract
    A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 microns wavelength; AR coating; InP/InGaAsP; as-cleaved facets; buried heterostructure; distributed feedback laser; high-power single longitudinal mode; laser diode; p-type InP substrate; semiconductor junction lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840598
  • Filename
    4249109
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995147