DocumentCode :
995518
Title :
Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements
Author :
white, Paul M. ; Healy, Richard M.
Author_Institution :
Equipment Dev. Labs., Raytheon Co., Wayland, MA, USA
Volume :
3
Issue :
12
fYear :
1993
Firstpage :
453
Lastpage :
454
Abstract :
An improved equivalent circuit for MESFET and HEMT devices under zero drain bias pinched-off conditions is proposed. Parasitic gate and drain capacitances evaluated from low-frequency Y parameters using this circuit are approximately equal under conditions where equality would be expected from bond pad geometry considerations. In contrast, the previously used circuit considerably overestimates parasitic drain capacitance.<>
Keywords :
Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; Coldfet measurements; HEMT; MESFET; bond pad geometry; drain capacitances; equivalent circuit; gate capacitances; low-frequency Y parameters; microwave transistors; parasitic capacitances; zero drain bias pinched-off conditions; Bonding; Capacitance measurement; Equations; Equivalent circuits; FETs; Frequency; HEMTs; MESFET circuits; PHEMTs; Parasitic capacitance;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.251398
Filename :
251398
Link To Document :
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