Title :
Planar InGaAs/InP PINFET fabricated by Be ion implantation
Author :
Hata, Satoshi ; Ikeda, Makoto ; Amano, Tetsuo ; Motosugi, G. ; Kurumada, K.
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
Planar InGaAs PINFETs which provide the same heterostructure for both the PIN and the FET are proposed with the characteristics, p-type regions for PIN and FET are formed by Be ion implantation. Static optical response exhibits the total effective quantum efficiency of 400% at the wavelength of 1.55 ¿m.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; phototransistors; 1.55 microns wavelength; Be ion implantation; III-V semiconductors; InGaAs; PINFETs; p-type regions; static optical response; total effective quantum efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840644
