• DocumentCode
    995771
  • Title

    Modal and relative intensity noise under VHF modulation in InGaAsP/InP lasers before and after degradation

  • Author

    Fukuda, Motohisa ; Iwane, G.

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
  • Volume
    20
  • Issue
    23
  • fYear
    1984
  • Firstpage
    964
  • Lastpage
    965
  • Abstract
    The modal and relative intensity noise of InGaAsP/InP lasers are monitored before and after degradation. These noise levels under VHF modulation are scarely affected by laser degradation and are almost determined by VHF modulation, although the noise levels under DC bias increase after degradation.
  • Keywords
    III-V semiconductors; electron device noise; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; DC bias; InGaAsP/InP lasers; VHF modulation; laser degradation; modal noise; noise levels; optical communication; relative intensity noise; semiconductor junction laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840657
  • Filename
    4249170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995771