• DocumentCode
    996149
  • Title

    Circuit models for three-dimensional geometries including dielectrics

  • Author

    Ruehli, Albert E. ; Heeb, Hansruedi

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    40
  • Issue
    7
  • fYear
    1992
  • fDate
    7/1/1992 12:00:00 AM
  • Firstpage
    1507
  • Lastpage
    1516
  • Abstract
    The partial element equivalent circuit (PEEC) approach has proved useful for modeling many different electromagnetic problems. The technique can be viewed as an approach for the electrical circuit modeling for arbitrary 3-D geometries. Recently, the authors extended the method to include retardation with the rPEEC models. So far the dielectrics have been taken into account only in an approximate way. In this work, they generalize the technique to include arbitrary homogeneous dielectric regions. The new circuit models are applied in the frequency as well as the time domain. The time solution allows the modeling of VLSI systems which involve interconnects as well as nonlinear transistor circuits
  • Keywords
    VLSI; equivalent circuits; frequency-domain analysis; integral equations; semiconductor device models; time-domain analysis; VLSI systems; electrical circuit modeling; frequency-domain; interconnects; nonlinear transistor circuits; partial element equivalent circuit; rPEEC models; three-dimensional geometries; time domain; Coupling circuits; Dielectrics; Electromagnetic modeling; Frequency; Geometry; Integrated circuit interconnections; Solid modeling; Transmission line theory; Very large scale integration; Wires;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.146332
  • Filename
    146332