996227

Erratum: Low-threshold high-speed 1.55 μm vapour phase transported buried heterostructure lasers (VPTBH)

Koch, T.L. ; Coldren, Larry A. ; Bridges, T.J. ; Burkhardt, E.G. ; Corvini, P.J. ; Miller, B.I.

20

24

1984

1024

III-V semiconductors; gallium compounds; indium compounds; optical modulation; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.55 microns; 3 dB detected bandwidths; InGaAsP buried heterostructure laser; VPE; high-frequency modulation characteristics; hydride vapour phase epitaxial regrowth technique; semiconductor laser; threshold current 15 mA;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:19840698

4249212