Title :
Modelling of microwave GaAs f.e.t. in common-gate operation
Author :
Zapata-Ferrer, J. ; Loriou, B.
Author_Institution :
Microwave Laboratory, ICS Department, Lannion, France
Abstract :
The common-source and common-gate equivalent circuits of GaAs f.e.t. at microwave frequencies are established and used to simulate the variations of gain and noise figure with frequency. The results obtained explain why the experimental minimum noise figure and source admittance in the common-gate configuration are different from the theoretical expectations based on low-frequency calculations.
Keywords :
electron device noise; equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave devices; common gate operation; equivalent circuits; gain; microwave GaAs FET; modelling; noise figure; source admittance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770074