DocumentCode :
996377
Title :
Modelling of microwave GaAs f.e.t. in common-gate operation
Author :
Zapata-Ferrer, J. ; Loriou, B.
Author_Institution :
Microwave Laboratory, ICS Department, Lannion, France
Volume :
13
Issue :
4
fYear :
1977
Firstpage :
106
Lastpage :
107
Abstract :
The common-source and common-gate equivalent circuits of GaAs f.e.t. at microwave frequencies are established and used to simulate the variations of gain and noise figure with frequency. The results obtained explain why the experimental minimum noise figure and source admittance in the common-gate configuration are different from the theoretical expectations based on low-frequency calculations.
Keywords :
electron device noise; equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave devices; common gate operation; equivalent circuits; gain; microwave GaAs FET; modelling; noise figure; source admittance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19770074
Filename :
4249226
Link To Document :
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