• DocumentCode
    996487
  • Title

    Laser gain and current density in a disordered AlGaAs/GaAs quantum well

  • Author

    Li, E.H. ; Chan, Kheong Sann

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
  • Volume
    29
  • Issue
    14
  • fYear
    1993
  • fDate
    7/8/1993 12:00:00 AM
  • Firstpage
    1233
  • Lastpage
    1234
  • Abstract
    The laser gain and current density at room temperature are analysed for disordered (interdiffusion induced) Al0.3Ga0.7As/GaAs single quantum well structures at a carrier injection level of 4*1012 cm-2. The results show that both the peak gain and current density remain about the same strength during the initial stages of disordering, and provide a bandwidth of 55 nm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; semiconductor quantum wells; AlGaAs-GaAs; carrier injection level; current density; disordered; laser gain; semiconductor lasers; single quantum well structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930824
  • Filename
    252401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996487