DocumentCode

996751

Title

Addendum: Enhancement-mode GaAs m.o.s.f.e.t. on semi-insulating substrate using a self-aligned gate technique

Author

Kohn, Erhard ; Colquhoun, A.

Volume

13

Issue

6

fYear

1977

Firstpage

168

Keywords

insulated gate field effect transistors; GaAs; enhancement mode MOST; self aligned gate; semiinsulating substrate;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19770120

Filename

4249265