DocumentCode
996799
Title
Photoetching of InP mesas for production of mm-wave transferred-electron oscillators
Author
Lubzens, D.
Author_Institution
Bell Laboratories, Holmdel, USA
Volume
13
Issue
7
fYear
1977
Firstpage
171
Lastpage
172
Abstract
A novel technique for fabricating small-diameter mesa-shaped structures on semiconducting substrates is described. The mesas, which are formed by etching and selective illumination of the substrate, show very little undercutting. The technique is suited for fabricating InP and GaAs transferred-electron oscillators, as well as impatt-diode structures for millimetre-wave sources.
Keywords
Gunn devices; etching; microwave oscillators; solid-state microwave devices; InP; MM wave transferred electron oscillators; mesa shaped structures; microwave oscillators; photoetching; selective illumination;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19770125
Filename
4249271
Link To Document