• DocumentCode
    996927
  • Title

    Innovative Simulations of Heavy Ion Cross Sections in 130 nm CMOS SRAM

  • Author

    Correas, Vincent ; Saigné, F. ; Sagnes, B. ; Boch, J. ; Gasiot, G. ; Giot, D. ; Roche, P.

  • Author_Institution
    Front-End Technol. & Manuf., STMicroelectronics, Crolles
  • Volume
    54
  • Issue
    6
  • fYear
    2007
  • Firstpage
    2413
  • Lastpage
    2418
  • Abstract
    A simulation tool to predict the heavy ion cross section is proposed. A 20% average error between experimental and simulated results is shown for a SRAM in a commercial 130 nm CMOS technology. Input parameters are obtained by device or circuit simulations and no fitting parameters or empirical calibration with previous radiation testings is needed.
  • Keywords
    CMOS integrated circuits; SRAM chips; CMOS SRAM; CMOS technology; heavy ion cross sections; CMOS technology; Calibration; Circuit simulation; Circuit testing; Computer aided manufacturing; Design automation; Helium; Passivation; Predictive models; Random access memory; Cross section; PHISco; PMOS; SEU; heavy ion; passivation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.910038
  • Filename
    4395087
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996927