Title :
Schottky Barrier Contact-Based RF MEMS Switch
Author :
Pillans, Brandon ; Morris, Frank ; Chahal, Prem ; Frazier, Gary ; Lee, Jeong-Bong
Author_Institution :
Raytheon Co., Dallas, TX
Abstract :
This paper presents the design, fabrication, and measurement results for a novel Schottky barrier contact-based radio frequency (RF) microelectromechanical systems (MEMS) switch. This Schottky barrier contact allows one not only to operate the RF MEMS switch in a traditional capacitive mode when it is reverse biased but also conduct current in a forward biased state. Forward biasing the switch recombines trapped charges, thus extending the lifetime of the switch. This paper intimately combines MEMS processing with solid-state electronics to produce a truly unique RF device.
Keywords :
Schottky barriers; microswitches; RF MEMS switch; Schottky barrier contact; capacitive mode; forward biased state; radio frequency microelectromechanical systems switch; solid-state electronics; Contacts; Fabrication; Frequency measurement; Microelectromechanical systems; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Schottky barriers; Spontaneous emission; Switches; Microelectromechanical devices; Schottky barriers; microwave switches; reliability; semiconductor materials;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2008.2007227
