DocumentCode
997018
Title
InGaN-GaN MQW LEDs with current blocking layer formed by selective activation
Author
Lee, Chia-Ming ; Chuo, Chang-Cheng ; Liu, Yu-Chuan ; Chen, I-Ling ; Chyi, Jen-Inn
Author_Institution
Dept. of Electr. Eng., National Central Univ., Taiwan
Volume
25
Issue
6
fYear
2004
fDate
6/1/2004 12:00:00 AM
Firstpage
384
Lastpage
386
Abstract
Selective activation technique was used to define a semi-insulating current-blocking layer underneath the p-pad of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The output power of the LEDs at 20 mA was increased 10% because less current was injected underneath the opaque p-pad.
Keywords
III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; 20 mA; InGaN-GaN; MQW LED; multiple-quantum-well light-emitting diodes; opaque p-pad; selective activation; semiinsulating current-blocking layer; Annealing; Atmosphere; Electrodes; Gallium nitride; Light emitting diodes; Nitrogen; Power generation; Quantum well devices; Temperature; Thermal conductivity; Current blocking layer; GaN; LEDs; light-emitting diodes; selective activation;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2004.829666
Filename
1302234
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