Silicon-based field-induced band-to-band tunnelling effect transistor

Author

Kim, Kyung Rok ; Kim, Dae Hwan ; Song, Ki-Whan ; Baek, Gwanghyeon ; Kim, Hyun Ho ; Huh, Jung Im ; Lee, Jong Duk ; Park, Byung-Gook

Author_Institution

Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., South Korea

Volume

25

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

439

Lastpage

441

Abstract

This letter reports a silicon-based field-induced band-to-band tunnelling effect transistor (FIBTET), which has a structure totally compatible with silicon-on-insulator (SOI) MOSFET. The field-induced band-to-band tunnelling effect between degenerate channel and source/drain is used as the key principle of the device operation. FIBTETs demonstrate the controllable negative differential transconductance characteristics at room temperature both for n-FIBTETs and p-FIBTETs. The size dependence of the device characteristics shows that the peak tunnelling current can be controlled by the layout design of channel length and width.

Keywords

MOSFET; electric admittance; resonant tunnelling transistors; silicon-on-insulator; tunnelling; MOSFET; controllable negative differential transconductance; peak tunnelling current; silicon-based field-induced band-to-band tunnelling effect transistor; silicon-on-insulator; Doping; Logic circuits; Logic devices; MOSFET circuits; Resonant tunneling devices; Silicon on insulator technology; Size control; Temperature control; Transconductance; Voltage; Band-to-band tunneling; FIBTET; SOI MOSFET; degenerate; negative differential transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.829668

Filename

1302252