A low-power 20-GHz 52-dBΩ transimpedance amplifier in 80-nm CMOS

Author

Kromer, Christian ; Sialm, Gion ; Morf, Thomas ; Schmatz, Martin L. ; Ellinger, Frank ; Erni, Daniel ; Jäckel, Heinz

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

39

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

885

Lastpage

894

Abstract

This paper describes the design of a transimpedance amplifier (TIA) for a low-power, short-distance, high-density fiber-optic interconnect communication system. The single-ended circuit has been designed in an 80-nm digital CMOS process and consumes only 2.2 mW from a 1-V supply. The measured results show a transimpedance gain of 52 dBΩ and a large bandwidth of 20 GHz. This work presents the highest bandwidth at the lowest power consumption for CMOS transimpedance amplifiers reported to date.

Keywords

CMOS analogue integrated circuits; low-power electronics; microwave integrated circuits; optical fibre communication; wideband amplifiers; 1 V; 2.2 mW; 20 GHz; 80 nm; CMOS analog integrated circuits; CMOS transimpedance amplifiers; digital CMOS process; fiber optic interconnect communication system; high-frequency CMOS circuits; optical receivers; power consumption; single-ended circuit; Bandwidth; CMOS technology; Circuits; Energy consumption; High speed optical techniques; Optical amplifiers; Optical attenuators; Optical fiber communication; Optical receivers; Optical transmitters; CMOS analog integrated circuits; high-frequency CMOS circuits; optical receivers; transimpedance amplifier;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.827807

Filename

1302265