Title :
Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier
Author :
He, Qiurong ; Feng, Milton
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fDate :
6/1/2004 12:00:00 AM
Abstract :
We present the design of two wide-band, low-power and low-noise amplifiers (LNAs) using SiGe BiCMOS technology. The distributed LNA demonstrated 0.1-23-GHz bandwidth and 14.5-dB gain with less than ±1-dB gain flatness. It exhibited 5-dB noise figure and 14.8-dBm output IP3, and dissipated 54-mW dc power. Comparable circuit performance was also obtained in the lumped LNA while utilizing only one-fifth the chip area of the distributed LNA.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; distributed amplifiers; integrated circuit design; low-power electronics; radiofrequency amplifiers; semiconductor materials; wideband amplifiers; LNAs; SiGe; SiGe BiCMOS technology; bandwidth; chip area; gain; gain flatness; high-gain; high-linearity SiGe BiCMOS wide-band low-noise amplifier; low-power; Bandwidth; BiCMOS integrated circuits; Circuit optimization; Distributed amplifiers; Distributed parameter circuits; Germanium silicon alloys; Linearity; Low-noise amplifiers; Noise figure; Silicon germanium; BiCMOS; LNAs; SiGe; broadband amplifiers; distributed amplifiers; linearity; low-noise amplifiers; noise figure;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.827801
