Title :
1-Gb/s 80-dBΩ fully differential CMOS transimpedance amplifier in multichip on oxide technology for optical interconnects
Author :
Park, Sung Min ; Lee, Jaeseo ; Yoo, Hoi-Jun
Author_Institution :
Sch. of Electr. Eng., Univ. of Ulsan, South Korea
fDate :
6/1/2004 12:00:00 AM
Abstract :
A 1-Gb/s differential transimpedance amplifier (TIA) is realized in a 0.25-μm standard CMOS technology, incorporating the regulated cascode input configuration. The TIA chip is then integrated with a p-i-n photodiode on an oxidized phosphorous-silicon (OPS) substrate by employing the multichip-on-oxide (MCO) technology. The MCO TIA demonstrates 80-dBΩ transimpedance gain, 670-MHz bandwidth for 1-pF photodiode capacitance, 0.54-μA average input noise current, -17-dBm sensitivity for 10-12 bit-error rate (BER), and 27-mW power dissipation from a single 2.5-V supply. It also shows negligible switching noise effect from an embedded VCO on the OPS substrate. Furthermore, a four-channel MCO TIA array is implemented for optical interconnects, resulting in less than -40-dB crosstalk between adjacent channels.
Keywords :
CMOS integrated circuits; differential amplifiers; optical interconnections; photodiodes; 0.54 muA; 1 pF; 2.5 V; 27 mW; 670 MHz; CMOS technology; CMOS transimpedance amplifier; bit-error rate; cascode input configuration; embedded VCO; multichip on oxide technology; optical interconnects; oxidized phosphorous-silicon substrate; p-i-n photodiode; photodiode capacitance; power dissipation; regulated cascode; switching noise effect; Bit error rate; CMOS technology; Crosstalk; Differential amplifiers; Optical amplifiers; Optical arrays; Optical interconnections; Optical noise; Photodiodes; Semiconductor optical amplifiers; MCO; Multichip-on-oxide; OPS; TIA; optical interconnects; oxidized phosphorous-silicon; regulated cascode; switching noise; transimpedance amplifier;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.827795
