A new MOSFET output conductance measurement technique

Author

Akram, M. Faheem ; Plummer, James D. ; Shott, John D.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

42

Issue

5

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

893

Lastpage

898

Abstract

A new technique is presented for accurate measurement of the output conductance of a metal-oxide semiconductor field effect transistor (MOSFET). This technique allows the measurement of output conductance down to the sub μS region with an accuracy of better than 1%. Measurements in this range of output conductance are plagued by stray capacitances and noise. The new technique effectively combats these sources of error. The above-mentioned accuracy is maintained even when the susceptance due to the stray capacitance is as much as five times the conductance being measured

Keywords

characteristics measurement; electrical conductivity measurement; insulated gate field effect transistors; MOSFET output conductance measurement; error; lock-in amplifier; metal-oxide semiconductor field effect transistor; noise; precision current source; stray capacitances; Capacitance; Current measurement; Electrical resistance measurement; FETs; Integrated circuit measurements; MOSFET circuits; Measurement techniques; Noise measurement; Operational amplifiers; Threshold voltage;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.252523

Filename

252523