• DocumentCode
    998601
  • Title

    GaAs f.e.t.s with graded channel doping profiles

  • Author

    Williams, R.E. ; Shaw, D.W.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, USA
  • Volume
    13
  • Issue
    14
  • fYear
    1977
  • Firstpage
    408
  • Lastpage
    409
  • Abstract
    Graded-channel GaAs f.e.t.s with the carrier concentration decreasing from the substrate¿epitaxial interface outwards are observed to exhibit more linear d.c. transfer characteristics, higher reverse gate breakdown voltages and lower 3rd-order intermodulation products than f.e.t.s fabricated from companion slices with uniform or flat doping profiles.
  • Keywords
    field effect transistors; gallium arsenide; semiconductor doping; vapour phase epitaxial growth; GaAs FETs; fabrication; graded channel doping profiles; higher reverse gate breakdown voltages; linearised DC transfer characteristics; reduced third order intermodulation products;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770297
  • Filename
    4249450
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=998601