• DocumentCode
    998677
  • Title

    X-band TRAPATT amplifiers

  • Author

    Oxley, C.H. ; Howard, Ayanna M. ; Purcell, J.J.

  • Author_Institution
    Plessey Company Limited, Allen Clark Research Centre, Towcester, UK
  • Volume
    13
  • Issue
    14
  • fYear
    1977
  • Firstpage
    416
  • Lastpage
    418
  • Abstract
    A 2-stage, class-C. X-band pulsed trapatt amplifier has been demonstrated, giving a maximum gain of 9·5 dB over a 1 dB bandwidth of 200 MHz at a centre frequency of 9.4GHz. The trapatt diodes have a silicon p+¿n¿n+ structure with silver integral heatsinks and gold-button heat reservoirs. Single-stage amplifiers have been operated with input pulse widths of 0·5 ¿s and gains of 5 dB, with 11%3 dB bandwidths centred at 9·2 GHz.
  • Keywords
    TRAPATT diodes; microwave amplifiers; solid-state microwave circuits; 200 MHz bandwidth; 9.4 GHz centre frequency; Ag integral heatsinks; Si p+-n-n+ structures; X-band pulsed trapatt amplifier; class-C amplifiers; experimental results; integral Au button heat reservoirs; performance; trapatt diodes; two stage amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770303
  • Filename
    4249456
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=998677