DocumentCode
998696
Title
Avalanche-noise dependence on avalanche-photodiode structures
Author
Nishida, Katsuhiko
Author_Institution
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Volume
13
Issue
14
fYear
1977
Firstpage
419
Lastpage
421
Abstract
Excess avalanche-photodiode noise is calculated by considering photogenerated diffusion currents and photogenerated carrier distributions. Computed results reveal the effects of junction depth, depletion-layer thickness and incident light direction on avalanche noise for various optical-absorption coefficients.
Keywords
avalanche diodes; electron device noise; photodiodes; avalanche photodiodes; depletion layer thickness effects; excess avalanche photodiode noise; incident light direction effects; junction depth effects; noise calculation; photogenerated carrier distributions; photogenerated diffusion currents; structure effects;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19770305
Filename
4249458
Link To Document