Title :
Avalanche-noise dependence on avalanche-photodiode structures
Author :
Nishida, Katsuhiko
Author_Institution :
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Abstract :
Excess avalanche-photodiode noise is calculated by considering photogenerated diffusion currents and photogenerated carrier distributions. Computed results reveal the effects of junction depth, depletion-layer thickness and incident light direction on avalanche noise for various optical-absorption coefficients.
Keywords :
avalanche diodes; electron device noise; photodiodes; avalanche photodiodes; depletion layer thickness effects; excess avalanche photodiode noise; incident light direction effects; junction depth effects; noise calculation; photogenerated carrier distributions; photogenerated diffusion currents; structure effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770305
