Title :
Optimised doping profiles for speed-up of GaAs m.e.s.f.e.t.s
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Simulation of m.e.s.f.e.t. logic cell shows that discharging of the gate depletion is significantly slower than the charging process. The transient response with the charging/discharging is analytically connected to arbitrary doping profiles. Specific profiles with a doping peak near the substrate boundary can reduce this discharging delay remarkably.
Keywords :
Schottky gate field effect transistors; doping profiles; logic devices; semiconductor device models; GaAs MESFET; logic cell; optimised doping profiles; transient response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780322
