DocumentCode
999170
Title
High-density trench gate DMOSFETs with trench contact structure
Author
Kim, J. ; Kim, S.-G. ; Roh, T.M. ; Lee, B.
Author_Institution
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Volume
40
Issue
11
fYear
2004
fDate
5/27/2004 12:00:00 AM
Firstpage
699
Lastpage
700
Abstract
A novel process technique for fabricating trench gate DMOSFETs using the two-step trench technique and trench contact structure is realised to obtain higher cell density and lower on-resistance. Using this process technique, a remarkably increased trench gate DMOSFET with a cell pitch of 1.6 μm and a channel density of 130 Mcell/in2 are obtained. The fabricated device has a low specific on-resistance of 0.28 mΩ · cm2 with a blocking voltage of 43 V, which is about 23 % lower than that of the device fabricated by the previous method.
Keywords
isolation technology; masks; power MOSFET; 1.6 micron; 43 V; blocking voltage; cell density; cell pitch; channel density; high density trench gate DMOSFET; lower on-resistance; specific on-resistance; trench contact structure; trench technique;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20040478
Filename
1302816
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