Title :
Triple-channel InP-based HEMT with highly nonlinear transconductance for nonlinear circuit applications
Author :
Majidi-Ahy, R. ; Nishimoto, C. ; Bandy, S. ; Pao, Y.C.
Author_Institution :
E.L. Ginzton Res. Centre, Palo Alto, CA, USA
Abstract :
The authors report the development of a triple-channel HEMT with two undoped In0.53Ga0.47As layers and a spike-doped In0.52Al0.48As layer on InP, designed to have a strongly nonlinear transconductance. The effective electron velocity and the electron density in the InGaAs layers are higher than in the thick InAlAs layer resulting in a highly nonlinear transconductance device with the potential for improved performance in nonlinear microwave circuit applications, as compared with conventional MESFETs and HEMTs.
Keywords :
III-V semiconductors; carrier density; high electron mobility transistors; indium compounds; solid-state microwave devices; InAlAs-InGaAs-InP; InGaAs layers; InP-based HEMT; electron density; electron velocity; highly nonlinear transconductance; microwave transistor; nonlinear circuit applications; nonlinear microwave circuit applications; spike-doped In 0.52Al 0.48As layer; thick InAlAs layer; triple-channel HEMT; undoped In 0.53Ga 0.47As layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931383
