Title :
Spectrally-controlled, gain-switched operation of InGaN diode laser
Author :
Hu, Y. ; Dubov, M. ; Khrushchev, I.
Author_Institution :
Photonics Res. Group, Aston Univ., Birmingham, UK
fDate :
5/27/2004 12:00:00 AM
Abstract :
Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser with an external feedback.
Keywords :
III-V semiconductors; Q-switching; gallium compounds; indium compounds; laser feedback; laser tuning; optical pulse generation; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; InGaN; InGaN diode laser; external feedback; gain switched laser operation; multiquantum well diode laser; narrow line pulse generation; picosecond pulse generation; self seeded laser operation; spectrally controlled laser operation; wavelength tunable pulse generation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040443
