DocumentCode :
999192
Title :
Spectrally-controlled, gain-switched operation of InGaN diode laser
Author :
Hu, Y. ; Dubov, M. ; Khrushchev, I.
Author_Institution :
Photonics Res. Group, Aston Univ., Birmingham, UK
Volume :
40
Issue :
11
fYear :
2004
fDate :
5/27/2004 12:00:00 AM
Firstpage :
702
Lastpage :
703
Abstract :
Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser with an external feedback.
Keywords :
III-V semiconductors; Q-switching; gallium compounds; indium compounds; laser feedback; laser tuning; optical pulse generation; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; InGaN; InGaN diode laser; external feedback; gain switched laser operation; multiquantum well diode laser; narrow line pulse generation; picosecond pulse generation; self seeded laser operation; spectrally controlled laser operation; wavelength tunable pulse generation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20040443
Filename :
1302818
Link To Document :
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