Title :
p+¿n hyperabrupt GaAs varactors grown by molecular-beam epitaxy
Author :
Covington, D.W. ; Hicklin, W.H.
Author_Institution :
Georgia Institute of Technology, Engineering Experiment Station, Atlanta, USA
Abstract :
Gallium-arsenide p¿n junction hyperabrupt varactor diodes have been grown by molecular-beam epitaxy. Near the junction the donor profile at depth x tracked x¿1.2. A capacitance ratio C0/C12 of 10 is observed for bias voltages of 0 and 12 V.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; p-n homojunctions; varactors; GaAs; MBE; capacitance ratio; molecular beam epitaxial growth; p-n junction hyperabrupt varactor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780509
