DocumentCode
999949
Title
Cadmium telluride/Langmuir film photovoltaic structures
Author
Dharmadasa, I.M. ; Roberts, G.G. ; Petty, M.C.
Author_Institution
University of Durham, Department of Applied Physics & Electronics, Durham, UK
Volume
16
Issue
6
fYear
1980
Firstpage
201
Lastpage
202
Abstract
The electrical properties of Schottky-barrier and Langmuir-film m.i.s. solar cells fabricated on chemically etched CdTe substrates are reported. The Schottky-barrier devices possess ideality factors close to unity and barrier heights of approximately 0.70 eV. Incorporation of one monolayer of a cadmium stearate Langmuir film between the metal electrode and the semiconductor is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under illumination conditions.
Keywords
II-VI semiconductors; Langmuir films; Schottky-barrier diodes; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; solar cells; CdTe/Langmuir film photovoltaic structures; MIS solar cells; Schottky barrier solar cells; electrical properties; ideality factors; open circuit voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800144
Filename
4249589
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