• DocumentCode
    999975
  • Title

    10 GHz/10 W internally matched flip-chip GaAs power f.e.t.s

  • Author

    Mitsui, Yoshifuru ; Kobiki, M. ; Wataze, M. ; Segawa, K. ; Otsubo, M. ; Ishii, Takuro

  • Author_Institution
    Mitsubishi Electric Corporation, Semiconductor Laboratory, Itami, Japan
  • Volume
    16
  • Issue
    6
  • fYear
    1980
  • Firstpage
    205
  • Lastpage
    206
  • Abstract
    A flip-chip GaAs power f.e.t. delivering 10 W power output with 3 dB gain has been realised at 10 GHz by using a newly developed internal matching technique, in which the f.e.t. chips are directly connected to the lumped capacitors in the matching networks.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; flip-chip devices; gallium arsenide; power transistors; solid-state microwave devices; 10 GHz 10 W FET; 3 dB gain; GaAs power FET; SHF; X-band; flip chip; internal matching technique; lumped capacitors; performance; solid state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800147
  • Filename
    4249592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999975